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2SC5196

Part Number	2SC5196
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complement...
Datasheet	2SC5196 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 6A 0.
6 A 60 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change i...

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