DatasheetsPDF.com

2SC5197

Part Number	2SC5197
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm • Complement...
Datasheet	2SC5197 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 8 0.
8 80 150 −55 to 150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter bre...

Similar Datasheet

2SC510 SILICON NPN TRANSISTOR - Toshiba
2SC5100 NPN TRANSISTOR - Sanken electric
2SC5100 SILICON POWER TRANSISTOR - SavantIC
2SC5100 NPN Transistor - INCHANGE
2SC5101 NPN TRANSISTOR - Sanken electric
2SC5101 SILICON POWER TRANSISTOR - SavantIC
2SC5101 NPN Transistor - INCHANGE
2SC5103 High speed switching transistor - Rohm
2SC5103 NPN Transistor - INCHANGE
2SC5104 NPN Transistor - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)