DatasheetsPDF.com

2SC5199

Toshiba Semiconductor
Part Number 2SC5199
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm • High break...
Datasheet PDF File 2SC5199 PDF File

2SC5199
2SC5199

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 160 V 160 V 5V 12 A 1.
2 A 120 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of hi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)