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2SC5376

Part Number	2SC5376
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting ...
Datasheet	2SC5376 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications 2SC5376 Unit: mm • Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.
) @IC = 10 mA/IB = 0.
5 mA • High collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55 to 125 °C JEDEC JEITA ― ― Note: Using continuously u...

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