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2SD1271A

Panasonic Semiconductor
Part Number 2SD1271A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2...
Datasheet PDF File 2SD1271A PDF File

2SD1271A
2SD1271A

Overview
Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.
7±0.
3 14.
0±0.
5 Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150 Unit V emitter voltage 2SD1271A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.
0 7.
5±0.
2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1271 2SD1271A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.
1A VCE = 2V, IC = 3A IC = 5A, IB = 0.
25A IC = 5A, IB = 0.
25A VCE = 10V, IC = 0.
5A, f = 10MHz IC = 3A, IB1 = 0.
3A, IB2 = – 0.
3A, VCC = 50V 30 0.
5 1.
5 0.
1 80 100 45 90 260 0.
5 1.
5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2SD1271, 2SD1271A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat...


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