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2SD1270

Panasonic Semiconductor
Part Number 2SD1270
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 0.7±0.1 10.0±0....
Datasheet PDF File 2SD1270 PDF File

2SD1270
2SD1270

Overview
Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 Unit: mm 4.
2±0.
2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 10 5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 7.
5±0.
2 16.
7±0.
3 φ3.
1±0.
1 4.
0 1.
4±0.
1 1.
3±0.
2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.
0±0.
5 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.
1A VCE = 2V, IC = 2A IC = 4A, IB = 0.
2A IC = 4A, IB = 0.
2A VCE = 10V, IC = 0.
5A, f = 10MHz IC = 2A, IB1 = 0.
2A, IB2 = – 0.
2A, VCC = 50V 30 0.
5 1.
5 0.
15 80 45 60 260 0.
5 1.
5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V Rank classification R 60 to 120 Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.
1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 5 IB=100mA 70mA 4 50mA 40mA 3 30mA 2 20mA 10mA 2SD1270 IC — VC...


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