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2SD1423A

Panasonic Semiconductor
Part Number 2SD1423A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030...
Datasheet PDF File 2SD1423A PDF File

2SD1423A
2SD1423A

Overview
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.
0±0.
2 3.
0±0.
2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) 0.
7±0.
1 2.
0±0.
2 marking 1 2 3 30 60 25 50 7 1 0.
5 300 150 –55 ~ +150 V emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.
27 1.
27 2.
54±0.
15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6 *2 +0.
2 0.
45–0.
1 Ratings Unit 15.
6±0.
5 Optimum for high-density mounting.
Allowing supply with the radial taping.
min typ max 0.
1 1 Unit µA µA V 30 60 25 50 7 85 40 0.
6 340 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 500 1200 Ta=25˚C 1000 2SD1423, 2SD1423A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.
3 0.
1 0.
03 0.
01 0.
01 0.
03 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 400 800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 200 1mA 300 600 200 400 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.
1 0.
3 1 3 10...


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