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KSC5305

Fairchild Semiconductor
Part Number KSC5305
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti ...
Datasheet PDF File KSC5305 PDF File

KSC5305
KSC5305

Overview
KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement B Equivalent Circuit C 1 E TO-220 2.
Collector 3.
Emitter 1.
Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 400 12 5 10 2 4 75 150 - 65 ~ 150 Units V V V A A A A W °C °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.
65 62.
5 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A1, June 2001 KSC5305D Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob tON tSTG tF tSTG tF VF trr Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn ON Time Storage Time Fall Time Storage Time Fall Time Diode Forward Voltage * Reverse recovery time (di/dt = 10A/µs) Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.
8A VCE=1V,IC=2A IC=0.
8A, IB=0.
08A IC=2A, IB=0.
4A IC=0.
8A, IB=0.
08A IC=2A, IB=0.
4A VCB = 10V, f=1MHz VCC=300V, IC =2A IB1 = 0.
4A, IB2=-1A RL = 150Ω VCC=15V,VZ=300V IC = 2A,IB1 = 0.
4A IB2 = -0.
4A, LC=200µH IF = 1A IF = 2A IF = 0.
4A IF = 1A IF = 2A Min.
800 400 12 22 8 Typ.
800 1.
4 1.
9 ...


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