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KST3904

Fairchild Semiconductor
Part Number KST3904
Manufacturer Fairchild Semiconductor
Description General Purpose Transistor
Published Apr 5, 2005
Detailed Description KST3904 KST3904 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Trans...
Datasheet PDF File KST3904 PDF File

KST3904
KST3904

Overview
KST3904 KST3904 General Purpose Transistor 3 2 1 SOT-23 1.
Base 2.
Emitter 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 60 40 6 200 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=0.
1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB=5V, IE=0, f=1MHz VCE=20V, IC=10mA, f=100MHz IC=100µA, VCE=5V, RS=1KΩ f=10Hz to 15.
7KHz VCC=3V, VBE=0.
5V IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1=IB2=1mA 300 5 70 250 0.
65 40 70 100 60 30 Min.
60 40 6 50 Max.
Units V V V nA 300 VCE(sat) VBE(sat) Cob fT NF tON * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure Turn On Time Turn Off Time 0.
2 0.
3 0.
85 0.
95 4 V V V V pF MHz dB ns ns tOFF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 1A ©2002 Fairchild Semiconductor Corporation Rev.
A1, November 2002 KST3904 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 240 10 VCE = 1V 200 IC = 10 IB hFE, DC CURRENT GAIN 160 1 VBE (sat) 120 80 0.
1 VCE (sat) 40 0 0.
1 0.
01 0.
1 1 10 100 1 10 100 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1000 IE = 0 f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = 20V Cob [pF], CAPACITANCE 1 100 0.
1 1 10 100 10 0.
1 1 10 10...


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