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KST3906

Fairchild Semiconductor
Part Number KST3906
Manufacturer Fairchild Semiconductor
Description General Purpose Transistor
Published Apr 5, 2005
Detailed Description KST3906 KST3906 General Purpose Transistor 3 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta...
Datasheet PDF File KST3906 PDF File

KST3906
KST3906

Overview
KST3906 KST3906 General Purpose Transistor 3 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1.
Base 2.
Emitter 3.
Collector Value -40 -40 -5 -200 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC= -10µA, IE=0 IC= -1.
0mA, IB=0 IE=10µA, IC=0 VCE= -30V, VEB= -3V VCE= -1V, IC= -0.
1mA VCE= -1V, IC= -1mA VCE= -1V, IC= -10mA VCE= -1V, IC= -50mA VCE= -1V, IC= -100mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5.
0mA IC= -10mA, IB= -1.
0mA IC= -50mA, IB= -5.
0mA IC= -10mA, VCE= -20V f=100MHz VCB= -5V, IE=0, f=1.
0MHz IC= -100µA, VCE= -5V RS=1KΩ f=10Hz to 15.
7KHz VCC= -3V, VBE= -0.
5V IC= -10mA, IB1= -1mA VCC= -3V, IC= -10mA IB1=IB2= -1mA Min.
-40 -40 -5 Max.
Units V V V -50 60 80 100 60 30 nA 300 VCE (sat) VBE (sat) fT Cob NF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure -0.
25 -0.
4 -0.
65 250 4.
5 4 -0.
85 -0.
95 V V V V MHz pF dB tON tOFF Turn On Time Turn Off Time 70 300 ns ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 2A ©2002 Fairchild Semiconductor Corporation Rev.
A2, November 2002 KST3906 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -1V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 VBE (sat) 10 -0.
1 VCE(sat) 1 -1 -10 -100 -1000 -0.
01 -0.
1 -1 -10 -100 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 IE = 0 f = 1MHz fT[MHz], C...


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