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IXFH20N80Q

IXYS Corporation
Part Number IXFH20N80Q
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs Q-Class
Published Apr 5, 2005
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Hig...
Datasheet PDF File IXFH20N80Q PDF File

IXFH20N80Q
IXFH20N80Q

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS(on) = 0.
42 W trr £ 250 ns Maximum Ratings 800 800 ±20 ±30 20 80 20 45 1.
5 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 300 TO-247 TO-264 1.
13/10 0.
9/6 6 4 10 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) W °C °C °C °C Nm/lb.
in.
Nm/lb.
in.
g g g G = Gate S = Source G D S D (TAB) TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
800 2.
5 4.
5 ±200 TJ = 25°C TJ = 125°C 25 1 0.
42 V V nA mA mA W • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy to mount • Space savings • High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions.
98616 (4/99) © 2000 IXYS All rights reserved 1-2 IXFH20N80Q IXFK20N80Q IXFT20N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
11 19 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 170 28 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1.
5 W (External), 27 74 14 150 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 34 80 0...


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