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IXFH20N80P

IXYS Corporation
Part Number IXFH20N80P
Manufacturer IXYS Corporation
Description PolarHV HiPerFET Power MOSFET
Published May 30, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20...
Datasheet PDF File IXFH20N80P PDF File

IXFH20N80P
IXFH20N80P

Overview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 800 800 ± 30 ± 40 20 50 10 30 1.
0 10 500 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types 300 260 PLUS220 SMD(IXFV.
.
S) 1.
13/10 Nm/lb.
in.
1.
.
65 / 2.
5.
.
15 6 5.
5 4 N/lb g g g G S D (TAB) G = Gate S = Source Features D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min.
Typ.
Max.
800 3.
0 5.
0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99511E(03/06) www.
DataSheet4U.
net © 2006 IXYS All rights reserved IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min.
Typ.
Max.
14 23 4685 VGS = 0 V, VDS = 25 V, f = 1 MHz 356 26 30 VGS = 10 V, VDS = 0.
5 VDSS, ID = 10 A RG = 2 Ω (External) 24 85 24 86 VGS = 10 V, VDS = 0.
5 VDSS, ID = 1...


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