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IXFN230N10

IXYS Corporation
Part Number IXFN230N10
Manufacturer IXYS Corporation
Description Power MOSFETs Single Die MOSFET
Published Apr 5, 2005
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, H...
Datasheet PDF File IXFN230N10 PDF File

IXFN230N10
IXFN230N10

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C TJ = 25°C to 150°C; RGS = 1 MΩ IXFN 230N10 D VDSS ID25 RDS(on) t rr = 100 V = 230 A = 6 mW < 250 ns G S S Maximum Ratings 100 100 ± 20 ± 30 230 100 920 150 64 4 5 700 -55 .
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+150 150 -55 .
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+150 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nit...


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