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IXFT80N085

IXYS Corporation
Part Number IXFT80N085
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT...
Datasheet PDF File IXFT80N085 PDF File

IXFT80N085
IXFT80N085

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 85 85 ±20 ±30 80 75 320 80 50 2.
5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.
in.
g g TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.
13/10 6 4 Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
85 2.
0 4.
0 ±100 TJ = 25°C TJ = 125°C 50 1 9 V V nA mA mA mW Advantages • Easy to mount • Space savings • High power density • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions.
98709 (03/24/00) © 2000 IXYS All rights reserved 1-2 IXFH 80N085 IXFT 80N085 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
35 55 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1675 590 50 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 4.
7 W (External), 75 95 31 180 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 42 75 0.
42 (TO-247) 0.
25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim.
Millimeter Min.
Max.
A B C D E F G H 19.
81 20.
32 20.
80 21...


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