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IXFT80N08

IXYS
Part Number IXFT80N08
Manufacturer IXYS
Description Power MOSFET
Published Jan 9, 2016
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT ...
Datasheet PDF File IXFT80N08 PDF File

IXFT80N08
IXFT80N08

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω T C = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 80 80 ±20 ±30 80 75 320 80 50 2.
5 5 V V V V A A A A mJ J V/ns 300 -55 to +150 150 -55 to +150 W °C °C °C 300 °C 1.
13/10 Nm/lb.
in.
6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA 80 2.
0 VGS = ±20 VDC, VDS = 0 VDS = VDSS...


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