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JANSR2N7389

International Rectifier
Part Number JANSR2N7389
Manufacturer International Rectifier
Description TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A)
Published Apr 7, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.882A REPETITIVE AVALANCHE AND dv/dt RATED H...
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JANSR2N7389
JANSR2N7389


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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
882A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHF9130 JANSR2N7389 RAD HARD [REF: MIL-PRF-19500/630] P-CHANNEL -100 Volt, 0.
30Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure.
Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary Part Number IRHF9130 BV DSS -100V RDS(on) 0.
30 Ω ID -6.
5A Features: n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sea...


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