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JANTX2N6806

International Rectifier
Part Number JANTX2N6806
Manufacturer International Rectifier
Description P-CHANNNEL TRANSISTORS
Published Apr 7, 2005
Detailed Description PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204...
Datasheet PDF File JANTX2N6806 PDF File

JANTX2N6806
JANTX2N6806

Overview
PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 200V, P-CHANNNEL Product Summary Part Number BVDSS IRF9230 -200V RDS(on) 0.
80 Ω ID -6.
5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 Features: n RepetitiveAvalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max.
Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight Units -6.
5 -4.
0 A -26 75 W 0.
60 W/°C ±20 V 181 mJ -6.
5 A 7.
5 mJ -5.
0 V/ns -55 to 150 °C 300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5 (typical) g For footnotes refer to the last page www.
irf.
com 1 09/28/15 IRF9230 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Parameter Drain-to-Source Breakdown Voltage Temperature Coef...


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