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JANTX2N6847

International Rectifier
Part Number JANTX2N6847
Manufacturer International Rectifier
Description POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
Published Apr 7, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.553B HEXFET ® JANTX2N6847 POWER MOSFET JAN...
Datasheet PDF File JANTX2N6847 PDF File

JANTX2N6847
JANTX2N6847

Overview
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
553B HEXFET ® JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9220] P-CHANNEL Product Summary Part Number JANTX2N6847 JANTXV2N6847 BVDSS -200V RDS(on) 1.
5Ω ID -2.
5A -200 Volt, 1.
5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Features: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6847, JANTXV2N6847 Units -2.
5 -1.
6 -10 20 0.
16 ±20 -5.
0 -55 to 150 300 (0.
063 in.
(1.
6mm) from case for 10.
5 seconds) 0.
98 (typical) A W W/K  V V/ns oC g To Order Previous Datasheet Index Next Data Sheet JANTX2N6847, JANTXV2N6847 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min.
-20...


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