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JDP2S01U

Toshiba Semiconductor
Part Number JDP2S01U
Manufacturer Toshiba Semiconductor
Description UHF~VHF Band RF Attenuator Applications
Published Apr 7, 2005
Detailed Description JDP2S01U TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications · · · Suitable for r...
Datasheet PDF File JDP2S01U PDF File

JDP2S01U
JDP2S01U

Overview
JDP2S01U TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages.
Low series resistance: rs = 0.
65 Ω (typ.
) Low capacitance: CT = 0.
7 pF (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 125 -55~125 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1E1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 mA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Test Condition Weight: 0.
004 g (typ.
) Min 30 ¾ ¾ ¾ ¾ Typ.
¾ ¾ 0.
9 0.
7 0.
65 Max ¾ 0.
1 0.
95 0.
9 1.
0 Unit V mA V pF W Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking 1 2003-03-24 JDP2S01U RESTRICTIONS ON PRODUCT USE ...


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