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JDP2S01S

Toshiba Semiconductor
Part Number JDP2S01S
Manufacturer Toshiba Semiconductor
Description UHF~VHF Band RF Attenuator
Published Apr 16, 2010
Detailed Description JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type www.DataSheet4U.com JDP2S01S UHF~VHF Band RF Attenuator Applications ...
Datasheet PDF File JDP2S01S PDF File

JDP2S01S
JDP2S01S

Overview
JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type www.
DataSheet4U.
com JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages.
Low series resistance: rs = 0.
65Ω(typ.
) Low capacitance: CT = 0.
65 pF (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 µA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Weight: 0.
0011 g Min 30 ¾ ¾ ¾ ¾ Typ.
¾ ¾ 0.
86 0.
65 0.
65 Max ¾ 0.
1 0.
92 0.
8 1 Unit V µA V pF Ω Note: Signal level when capacitance is measured.
Vsig = 20 mVrms Marking 1 1 2001-12-05 JDP2S01S www.
DataShe...


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