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SMBT6428

Siemens Semiconductor Group
Part Number SMBT6428
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Transistors
Published Apr 7, 2005
Detailed Description NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low coll...
Datasheet PDF File SMBT6428 PDF File

SMBT6428
SMBT6428

Overview
NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Type SMBT 6428 SMBT 6429 Marking s1K s1L Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values SMBT 6428 SMBT 6429 50 60 45 55 6 200 330 150 – 65 … + 150 Unit V mA mW ˚C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 Collector-base breakdown voltage IC = 10 µA SMBT 6428 SMBT 6429 Emitter-base breakdown voltage IE = 1 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain IC = 10 µA, VCE = 5 V IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 VCEsat – – VBE(on) 0.
56 – – – 0.
2 0.
6 0.
66 V(BR)CE0 50 45 V(BR)CB0 60 55 V(BR)EB0 ICB0 – – ICE0 IEB0 hFE 250 500 250 500 250 500 250 500 – – – – – – – – – – 650 1250 – – – – V – – – – – – 10 10 100 10 – nA µA nA 6 – – – – – – – – – – V Values typ.
max.
Unit IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 1 mA, VCE = 5 V 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2 ...


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