DatasheetsPDF.com

SK202

Polyfet RF Devices
Part Number SK202
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published Apr 8, 2005
Detailed Description polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband R...
Datasheet PDF File SK202 PDF File

SK202
SK202

Overview
polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.
0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
40 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC oo -65 C to 150 C 3.
0 A 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 10.
0 WATTS OUTPUT ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps Common Source Power Gain η Drain Efficiency 10 40 dB Idq = 0.
80 A, Vds = 28.
0 V, F =1,000 MHz % Idq = 0.
80 A, Vds = 28.
0 V, F =1,000 MHz VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.
80 A, Vds = 28.
0 V, F =1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Bvdss Idss Drain Breakdown Voltage Zero Bias Drain Current 65 V Ids = 20.
00 mA, Vgs = 0V 0.
4 mA Vds = 28.
0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 2 5V Ids = 0.
04 A, Vgs = Vds gM Forward Transconductance 0.
6 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 2.
00 Ohm Vgs = 20V, Ids = 1.
00 A Idsat Saturation Current 2.
80 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 20.
0 pF Vds = 28.
0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 1.
2 pF Vds = 28.
0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 12.
0 pF Vds = 28.
0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/16/20...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)