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SGW10N60A

Infineon Technologies AG
Part Number SGW10N60A
Manufacturer Infineon Technologies AG
Description Fast IGBT in NPT-technology
Published Apr 8, 2005
Detailed Description SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined wit...
Datasheet PDF File SGW10N60A PDF File

SGW10N60A
SGW10N60A


Overview
SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SGP10N60A SGB10N60A SGW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55.
.
.
+150 °C 1) VCE 600V IC 10A VCE(sat) 2.
3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.
6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Jul-02 SGP10N60A, SGB10N60A SGW10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) Symbol Conditions Max.
Value Unit RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.
35 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltag...


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