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SGW10N60

Infineon Technologies Corporation
Part Number SGW10N60
Manufacturer Infineon Technologies Corporation
Description Fast S-igbt
Published Apr 5, 2009
Detailed Description SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous ...
Datasheet PDF File SGW10N60 PDF File

SGW10N60
SGW10N60

Overview
SGP10N60 www.
DataSheet4U.
com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter VCE 600V IC 10A VCE(sat) 2.
2V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234 Symbol VCE IC Value 600 21 10.
9 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55.
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+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Mar-00 SGP10N60 www.
DataSheet4U.
com SGB10N60, SGW10N60 Symbol Conditions Max.
Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.
2 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C G...


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