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SI2302ADS

Vishay Siliconix
Part Number SI2302ADS
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description N-Channel 2.5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.060 at VGS = 4.5 V...
Datasheet PDF File SI2302ADS PDF File

SI2302ADS
SI2302ADS

Overview
N-Channel 2.
5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.
060 at VGS = 4.
5 V 0.
115 at VGS = 2.
5 V ID (A) 2.
4 2.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 20 ±8 2.
4 2.
1 1.
9 1.
7 10 0.
94 0.
6 0.
9 0.
7 0.
57 0.
46 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Symbol RthJA Typical 115 140 Notes: a.
Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: www.
vishay.
com/www/product/spice.
htm Maximum 140 175 Unit V A W °C Unit °C/W Document Number: 71831 www.
vishay.
com S11-2000-Rev.
J, 10-Oct-11 1 This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 Si2302ADS Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS = 0 V, ID = 10 µA VDS = VGS, ID = 50 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.
5 V VDS ≥ 5...


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