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SI2304DS

NXP
Part Number SI2304DS
Manufacturer NXP
Description N-channel FET
Published Apr 8, 2005
Detailed Description SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description...
Datasheet PDF File SI2304DS PDF File

SI2304DS
SI2304DS

Overview
SI2304DS N-channel enhancement mode field-effect transistor Rev.
01 — 17 August 2001 M3D088 Product data 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23.
2.
Features s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package.
3.
Applications s Battery management s High speed switch s Low power DC to DC converter.
4.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MSB003 MBB076 Simplified outline 3 Symbol d s SOT23 1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.
V.
Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.
5 V; ID = 500 mA Min − − − − − − Typ − − − − − − Max 30 1.
7 0.
83 150 117 190 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 5 V; Figure 2 and 3 Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Tj = 25 to 150 °C; RGS = 20 kΩ Min − − − − − − − −65 −65 − − Max 30 30 ±20 1.
7 1.
1 7.
5 0.
83 +150 +150 0.
83 3.
3 Unit V V V A A A W °C °C A A Source-drai...


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