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SI2305DS

Vishay Siliconix
Part Number SI2305DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = ...
Datasheet PDF File SI2305DS PDF File

SI2305DS
SI2305DS

Overview
Si2305DS Vishay Siliconix P-Channel 1.
25-W, 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.
052 @ VGS = –4.
5 V 0.
071 @ VGS = –2.
5 V 0.
108 @ VGS = –1.
8 V ID (A) "3.
5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –8 "8 "3.
5 "2.
8 "12 –1.
6 1.
25 0.
8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a.
Surface Mounted on FR4 Board.
b.
t v5 sec.
Document Number: 70833 S-56947—Rev.
C, 28-Dec-98 www.
vishay.
com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 Si2305DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.
4 V, VGS = 0 V VDS = –6.
4 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.
5 V VDS v –5 V, VGS = –2.
5 V VGS = –4.
5 V, ID = –3.
5 A a D i S Drain-Source On-Resistance O R i Symbol Test Conditions Min Typ Max Unit –8 V –0.
45 "100 –1 –10 –6 A –3 0.
044 0.
060 0.
087 8.
5 –1.
2 0.
052 0.
071 0.
108 S V W nA mA On-State Drain Currenta ID(on) rDS(on) VGS = –2.
5 V, ID = –3 A VGS = –1.
8 V, ID = –2 A Forward Transconductancea gfs VSD VDS = –5 V, ID = –3.
5 A IS = –1.
6 A, VGS = 0 V Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss 4V 0 f = 1 MHz MH VDS = –4 V, VGS = 0, VDS...


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