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SI3430DV

Vishay Siliconix
Part Number SI3430DV
Manufacturer Vishay Siliconix
Description N-channel MOSFET
Published Apr 8, 2005
Detailed Description Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.4 2.3 rDS(on) (...
Datasheet PDF File SI3430DV PDF File

SI3430DV
SI3430DV

Overview
Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.
4 2.
3 rDS(on) (W) 0.
170 @ VGS = 10 V 0.
185 @ VGS = 6.
0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.
85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.
1 0 1 mH TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAR EAR IS PD TJ, Tstg 5 secs 100 "20 2.
4 1.
7 8 6 1.
8 1.
7 2.
0 1.
0 Steady State Unit V 1.
8 1.
3 A mJ 1.
0 1.
14 0.
59 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71235 S-31725—Rev.
B, 18-Aug-03 www.
vishay.
com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.
5 110 30 Unit _C/W 1 Si3430DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.
4 A VGS = 6.
0 V, ID = 2.
3 A VDS = 15 V, ID = 2.
4 A IS = 1.
7 A, VGS = 0 V 8 0.
148 0.
160 7 0.
8 1.
2 0.
170 0.
185 2 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn...


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