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SI3430DY

Vishay Siliconix
Part Number SI3430DY
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jan 15, 2012
Detailed Description www.DataSheet.co.kr SPICE Device Model Si3430DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET CHARACTERISTICS • N-Chann...
Datasheet PDF File SI3430DY PDF File

SI3430DY
SI3430DY

Overview
www.
DataSheet.
co.
kr SPICE Device Model Si3430DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 71524 S-50383Rev.
B, 21-Mar-05 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr SPICE Device Model Si3430DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea b Symbol VGS(th) ID(on) rDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 2.
4 A VGS = 6 V, ID = 2.
3 A VDS = 15 V, ID = 2.
4 A IS = 1.
7 A, VGS = 0 V Typical 3 34 0.
146 0.
154 8.
1 0.
72 Unit V A Ω S V Dynamic Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Time Rise Time...


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