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SI4804DY

Vishay Siliconix
Part Number SI4804DY
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4804DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V ...
Datasheet PDF File SI4804DY PDF File

SI4804DY
SI4804DY

Overview
Si4804DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.
022 @ VGS = 10 V 0.
030 @ VGS = 4.
5 V ID (A) 7.
5 6.
5 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.
1 mH TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 "20 7.
5 5.
7 6.
0 4.
6 20 1.
7 0.
9 10 5 2...


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