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SI4947DY

Vishay Siliconix
Part Number SI4947DY
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4947DY Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) 0.085 @ VGS = –10 V 0.19 @ V...
Datasheet PDF File SI4947DY PDF File

SI4947DY
SI4947DY

Overview
Si4947DY Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) 0.
085 @ VGS = –10 V 0.
19 @ VGS = –4.
5 V ID (A) "3.
5 "2.
5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –30 "20 "3.
5 "2.
8 "20 –1.
7 2.
0 1.
3 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
Please request FaxBack document #70156.
A SPICE Model data sheet is available for this product (FaxBack document #70554).
Symbol RthJA Limit 62.
5 Unit _C/W Siliconix S-49520—Rev.
C, 18-Dec-96 1 Si4947DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VDS w –5 V, VGS = –10 V VGS = –10 V, ID = 2.
5 A VGS = –4.
5 V, ID = 1.
8 A VDS = –15 V, ID = –2.
5 A IS = –1.
7 A, VGS = 0 V –15 0.
066 0.
125 5.
0 –0.
8 –1.
2 0.
085 0.
19 1.
0 "100 –1 –25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.
7 A, di/dt =...


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