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IRF323

Intersil Corporation
Part Number IRF323
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Des...
Datasheet PDF File IRF323 PDF File

IRF323
IRF323

Overview
Semiconductor IRF320, IRF321, IRF322, IRF323 2.
8A and 3.
3A, 350V and 400V, 1.
8 and 2.
5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17404.
July 1998 Features • 2.
8A and 3.
3A, 350V and 400V • rDS(ON) = 1.
8Ω and 2.
5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Gu...


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