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IRF7469

International Rectifier
Part Number IRF7469
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD- 93951A SMPS MOSFET IRF7469 HEXFET® Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchr...
Datasheet PDF File IRF7469 PDF File

IRF7469
IRF7469

Overview
PD- 93951A SMPS MOSFET IRF7469 HEXFET® Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l VDSS 40V RDS(on) max(mΩ) 17@VGS = 10V ID 9.
0A Benefits l l l S S 1 8 7 A A D D D D 2 Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current S G 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max.
40 ± 20 9.
0 7.
3 73 2.
5 1.
6 0.
02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 50 Units °C/W Notes  through „ are on page 8 www.
irf.
com 1 3/25/01 IRF7469 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
40 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.
0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
04 12 15.
5 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 17 VGS = 10V, ID = 9.
0A ƒ mΩ 21 VGS = 4.
5V, ID = 7.
2A ƒ 3.
0 V VDS = VGS, ID = 250µA 20 VDS = 32V, VGS = 0V µA 100 VDS = 32V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller"...


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