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IRF7493

International Rectifier
Part Number IRF7493
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94654B IRF7493 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 80V RDS(on) max 15m:@VG...
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IRF7493
IRF7493

Overview
PD - 94654B IRF7493 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 80V RDS(on) max 15m:@VGS=10V Qg (typ.
) 35nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
80 ± 20 9.
3 7.
4 74 2.
5 1.
6 0.
02 -55 to + 150 Units V c A W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range f f W/°C °C Thermal Resistance Parameter RθJC RθJA Junction-to-Lead Junction-to-Ambient Typ.
––– ––– Max.
20 50 Units f Notes  through … are on page 9 www.
irf.
com 1 7/29/03 IRF7493 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 80 ––– ––– 2.
0 ––– ––– ––– ––– ––– 0.
074 11.
5 ––– ––– ––– ––– ––– ––– ––– 15 4.
0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 5.
6A e V µA VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Crss eff.
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output C...


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