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IRF820

STMicroelectronics
Part Number IRF820
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Apr 16, 2005
Detailed Description ® IRF820 N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH™ MOSFET TYPE IRF820 s s s s s V DSS 500 V R DS(on) < 3Ω...
Datasheet PDF File IRF820 PDF File

IRF820
IRF820

Overview
® IRF820 N - CHANNEL 500V - 2.
5 Ω - 2.
5 A - TO-220 PowerMESH™ MOSFET TYPE IRF820 s s s s s V DSS 500 V R DS(on) < 3Ω ID 2.
5 A TYPICAL RDS(on) = 2.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulse...


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