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IRF9230

Seme LAB
Part Number IRF9230
Manufacturer Seme LAB
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRF9230 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0...
Datasheet PDF File IRF9230 PDF File

IRF9230
IRF9230

Overview
IRF9230 MECHANICAL DATA Dimensions in mm (inches) 39.
95 (1.
573) max.
30.
40 (1.
197) 30.
15 (1.
187) 17.
15 (0.
675) 16.
64 (0.
655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.
32 (0.
800) 18.
80 (0.
740) dia.
7.
87 (0.
310) 6.
99 (0.
275) 1.
78 (0.
070) 1.
52 (0.
060) 11.
18 (0.
440) 10.
67 (0.
420) 26.
67 (1.
050) max.
4.
09 (0.
161) 3.
84 (0.
151) dia.
2 plcs.
2 –200V –6.
5A 0.
8Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.
09 (0.
043) 0.
97 (0.
038) dia.
2 plcs.
TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.
07 (0.
475) 11.
30 (0.
445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –6.
5A –4A –28A 75W 0.
6W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 2 66mJ –6.
5A 7.
5mJ –5V/ns –55 to +150°C 300°C Repetitive Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.
6mm (0.
63”) from case for 10 sec.
Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = –50V , L ≥ 2.
3mH , RG = 25Ω , Peak IL = –6.
5A , Starting TJ = 25°C 3) @ ISD ≤ –6.
5A , di/dt ≤ –100A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.
5Ω Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
Prelim.
9/96 IRF9230 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source...


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