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IRF9Z24L

Part Number	IRF9Z24L
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 9.912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-...
Datasheet	IRF9Z24L PDF File

Overview

PD - 9.
912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l l D VDSS = -60V RDS(on) = 0.
28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface m...

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