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IRFBA1404

International Rectifier
Part Number IRFBA1404
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93806 AUTOMOTIVE MOSFET Typical Applications l l l l l l l l l l l IRFBA1404P HEXFET® Power MOSFET D Anti-lock B...
Datasheet PDF File IRFBA1404 PDF File

IRFBA1404
IRFBA1404

Overview
PD - 93806 AUTOMOTIVE MOSFET Typical Applications l l l l l l l l l l l IRFBA1404P HEXFET® Power MOSFET D Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking Radiator Fan Control Advanced Process Technology Ultra Low On-Resistance Increase Current Handling Capability 175°C Operating Temperature Fast Switching Dynamic dv/dt Rating Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 3.
7mΩ Benefits G ID = 206A† S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die.
The result is significantly increased current handling capability over both the TO-220 and the much larger TO247 package.
The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has been designed to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Super-220™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Ene...


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