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IRFBA1405P

International Rectifier
Part Number IRFBA1405P
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Apr 16, 2005
Detailed Description PD -94111A AUTOMOTIVE MOSFET Typical Applications ● Electric Power Steering (EPS) ● Anti-lock Braking System (ABS) ...
Datasheet PDF File IRFBA1405P PDF File

IRFBA1405P
IRFBA1405P

Overview
PD -94111A AUTOMOTIVE MOSFET Typical Applications ● Electric Power Steering (EPS) ● Anti-lock Braking System (ABS) ● Wiper Control ● Climate Control ● Power Door Benefits ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating G ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die.
The result is significantly increased current handling capability over both the TO-220 and the much larger TO- 247 package.
The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has been designed to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings IRFBA1405P HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.
0mΩ ID = 174A† S Super-220™ ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG www.
irf.
com Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak ...


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