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IRFBC20S

Vishay
Part Number IRFBC20S
Manufacturer Vishay
Description Power MOSFET
Published Oct 28, 2014
Detailed Description IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n...
Datasheet PDF File IRFBC20S PDF File

IRFBC20S
IRFBC20S

Overview
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.
0 8.
9 Single D 600 4.
4 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC20S, SiHFBC20S) • Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) • Available in Tape and Reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRFBC20L, SiHFBC20L) is a available for low-profile applications.
FEATURES I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHFBC20S-GE3 IRFBC20SPbF SiHFBC20S-E3 D2PAK (TO-263) SiHFBC20STRL-GE3a IRFBC20STRLPbFa SiHFBC20STL-E3a I2PAK (TO-262) SiHFBC20L-GE3 IRFBC20LPbF SiHFBC20L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TA = 25 °C TC = 25 °C VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt LIMIT 600 ± 20 2.
2 1.
4 ...


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