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IRFD220

Part Number	IRFD220
Manufacturer	Intersil Corporation
Description	N-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancemen...
Datasheet	IRFD220 PDF File

Overview

IRFD220 Data Sheet July 1999 File Number 2317.
3 0.
8A, 200V, 0.
800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09600.
Features • 0.
8A, 200V • rDS(ON) = 0.
800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD220 PAC...

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