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IRFF110

Part Number	IRFF110
Manufacturer	Intersil Corporation
Description	N-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	IRFF110 Data Sheet March 1999 File Number 1562.3 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhanceme...
Datasheet	IRFF110 PDF File

Overview

IRFF110 Data Sheet March 1999 File Number 1562.
3 3.
5A, 100V, 0.
600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17441.
Features • 3.
5A, 100V • rDS(ON) = 0.
600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFF110 PACKAGE TO-205AF BRAND IRFF110 Symbol D NOTE: When ordering, use the entire part number.
G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed IRFF110 100 100 3.
5 14 ±20 15 0.
12 19 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID Pulsed Drain Current (Note 3) .
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