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IRFF110

Part Number	IRFF110
Manufacturer	International Rectifier
Description	HEXFET TRANSISTORS
Published	Mar 11, 2016
Detailed Description	PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number ...
Datasheet	IRFF110 PDF File

Overview

PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF110 100V RDS(on) .
60Ω ID 3.
5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 3.
5 2.
25 A 14 15 W 0.
12 W/°C ±20 V 68 mJ —A — mJ 5.
5 V/ns -55 to 150 oC 300 (0.
063 in.
(1.
6mm) from case for 10s) 0.
98(typical) g For footnotes refer to the last page www.
irf.
com 1 01/22/01 IRFF110 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.
0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.
10 — V/°C Reference to 25°C, ID = 1.
0mA Voltage RDS(...

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