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IRFF9130

Intersil Corporation
Part Number IRFF9130
Manufacturer Intersil Corporation
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enh...
Datasheet PDF File IRFF9130 PDF File

IRFF9130
IRFF9130

Overview
IRFF9130 Data Sheet February 1999 File Number 2216.
3 -6.
5A, -100V, 0.
300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17511.
Features • -6.
5A, -100V • rDS(ON) = 0.
300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9130 PACKAGE TO-205AF BRAND IRFF9130 G S NOTE: When ordering, include the entire part number.
Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-101 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9130 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF9130 -100 -100 -6.
5 -26 ±20 25 0.
2 500 -55 to 150 300 UNITS V V A A V W W/oC mJ oC oC Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20MΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID Pulsed Drain Current (Note 3) .
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