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IRFF9110

International Rectifier
Part Number IRFF9110
Manufacturer International Rectifier
Description HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Published Apr 11, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-...
Datasheet PDF File IRFF9110 PDF File

IRFF9110
IRFF9110

Overview
( DataSheet : www.
DataSheet4U.
com ) PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.
2Ω ID -2.
5A  IRFF9110 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
 TO-39 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -2.
5 -1.
6 -10 15 0.
12 ±20 87 — — -5.
5 -55 to 150 300 (0.
063 in.
(1.
6mm) from case for 10s) 0.
98(typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 01/23/01 www.
DataSheet4U.
com www.
DataSheet4U.
com IRFF9110 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forwa...


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