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XN02501

Panasonic Semiconductor
Part Number XN02501
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±...
Datasheet PDF File XN02501 PDF File

XN02501
XN02501

Overview
Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.
8 -0.
3 0.
65±0.
15 +0.
2 +0.
25 1.
5 -0.
05 5 0.
65±0.
15 1 0.
95 2.
9 -0.
05 q q Two elements incorporated into one package.
(Base-coupled transistors) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 4 0.
95 3 2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06 +0.
1 1.
1 -0.
1 q 2SD601A × 2 elements 0.
8 s Basic Part Number of Element +0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Emitter (Tr2) 0 to 0.
1 0.
1 to 0.
3 4 : Base 5 : Emitter (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 5W Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.
5 0.
99 0.
1 150 3.
5 0.
3 V MHz pF min 60 50 7 0.
1 100 460 typ max Unit V V V µA µA Ratio between 2 elements +0.
1 1.
45±0.
1 s Features 1 Composite Transistors PT — Ta 500 60 Ta=25˚C IB=160µA XN2501 IC — VCE 1200 VCE=10V Ta=25˚C 1000 IB — VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current ...


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