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XN02531

Panasonic Semiconductor
Part Number XN02531
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixi...
Datasheet PDF File XN02531 PDF File

XN02531
XN02531

Overview
Composite Transistors XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 2.
8 -0.
3 0.
65±0.
15 +0.
2 +0.
25 1.
5 -0.
05 5 0.
65±0.
15 1 0.
95 2.
9 -0.
05 q q Two elements incorporated into one package.
(Base-coupled transistors) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 4 0.
95 3 2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06 +0.
1 1.
1 -0.
1 q 2SC3130 × 2 elements 0.
8 s Basic Part Number of Element +0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings 15 10 3 50 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Emitter (Tr2) 0 to 0.
1 0.
1 to 0.
3 4 : Base 5 : Emitter (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 9I Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio hFE2/hFE1 ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency Collector to base parameter Common base reverse transfer capacitance *1 (Ta=25˚C) Symbol VCEO VEBO ICBO ICEO hFE1 hFE (small/large)*1 hFE2/hFE1 VCE(sat) Cob fT rbb'·CC Crb Conditions IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA VCE = 4V, IC = 5mA VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = –5mA, f = 30MHz VCB = 4V, IE = 0, f = 1MHz 1.
4 0.
9 1.
9 11.
8 0.
25 75 0.
5 0.
75 200 0.
99 1.
6 0.
5 1.
1 2.
5 13.
5 0.
35 V pF GHz ps pF min 10 3 1 10 400 typ max Unit V V µA µA Ratio between 2 elements +0.
1 1.
45±0.
1 s Features 1 Composite Transistors PT — Ta 240 80...


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