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XN4312

Panasonic Semiconductor
Part Number XN4312
Manufacturer Panasonic Semiconductor
Description Silicon NPN(PNP) epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2...
Datasheet PDF File XN4312 PDF File

XN4312
XN4312

Overview
Composite Transistors XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.
65±0.
15 2.
8 –0.
3 +0.
2 +0.
25 1.
5 –0.
05 6 0.
65±0.
15 1 0.
3 –0.
05 0.
5 –0.
05 0.
95 +0.
2 q q Two elements incorporated into one package.
(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.
9 –0.
05 1.
9±0.
1 5 2 0.
95 4 3 s Basic Part Number of Element q 1.
1–0.
1 0.
4±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 –50 –50 –100 300 150 –55 to +150 Unit V V mA V V mA mW ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7T Internal Connection 6 5 4 Tr1 1 2 3 ˚C Tr2 0 to 0.
05 UN1212+UN1112 0.
1 to 0.
3 0.
8 0.
16–0.
06 +0.
2 +0.
1 1.
45±0.
1 s Features +0.
1 +0.
1 1 Composite Transistors XN4312 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.
3mA VCC = 5V, VB = 0.
5V, RL = 1kΩ VCC = 5V, VB = 2.
5V, RL = 1kΩ VCB = 10V, IE = –1mA, f = 200MHz –30% 0.
8 150 22 1.
0 +30% 1.
2 4.
9 0.
2 60 0.
25 V V V MHz kΩ min 50 50 0.
1 0.
5 0.
2 typ max Unit V V µA µA mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio q Tr2 Parameter Sy...


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