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XN4381

Panasonic Semiconductor
Part Number XN4381
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type
Published Mar 21, 2007
Detailed Description www.DataSheet4U.com Composite Transistors XN04381 (XN4381) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxi...
Datasheet PDF File XN4381 PDF File

XN4381
XN4381

Overview
www.
DataSheet4U.
com Composite Transistors XN04381 (XN4381) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 4 2.
90+0.
20 –0.
05 1.
9±0.
1 (0.
95) (0.
95) 5 6 0.
16+0.
10 –0.
06 1.
50+0.
25 –0.
05 2.
8+0.
2 –0.
3 3 2 1 ■ Basic Part Number • UNR2213 (UN2213) + UNR2122 (UN2122) 0.
30+0.
10 –0.
05 0.
50+0.
10 –0.
05 10˚ 1.
1+0.
2 –0.
1 Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −500 300 150 −55 to +150 Unit V V mA V V mA mW °C °C 3 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.
1 Marking Symbol: CW Internal Connection 4 Tr2 Tr1 2 1 5 6 Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2003 SJJ00068BED 1.
1+0.
3 –0.
1 ■ Absolute Maximum Ratings Ta = 25°C (0.
65) 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package 0.
4±0.
2 5˚ 1 XN04381 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V,...


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