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ZC832A

Zetex Semiconductors
Part Number ZC832A
Manufacturer Zetex Semiconductors
Description SOT23 SILICON VARIABLE CAPACITANCE DIODES
Published Apr 16, 2005
Detailed Description SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High T...
Datasheet PDF File ZC832A PDF File

ZC832A
ZC832A

Overview
SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg MAX 200 330 SOT23 UNIT mA mW °C -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb =25°C) PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Temperature Coefficient of Capacitance SYMBOL VBR IR MIN 25 0.
2 0.
03 10 0.
04 TYP MAX UNIT CONDITIONS V nA %/°C I R =10 µ A V R=20V V R=3V, f=1MHz η TUNING CHARACTERISTICS (at Tamb =25°C) PART NO Nominal Capacitance (pF) VR=2V, f=1MHz MIN ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A 9.
0 13.
5 19.
8 29.
7 42.
3 61.
2 90.
0 NOM 10.
0 15.
0 22.
0 33.
0 47.
0 68.
0 100.
0 MAX 11.
0 16.
5 24.
2 36.
3 51.
7 74.
8 110.
0 Minimum Q @ VR=3V f=50MHz 300 300 200 200 200 ...


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